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Announcements

  • May 2024: Dr. Rahimo will be giving a lecture at the European PhD School in Gaeta Italy to be held between the 27th and 31st May 2024. The title of the lecture is "High Voltage/High Power Semiconductors (Si, SiC)". (index.php (ecpe.org))

  • March 2024: mqSemi AG is happy to announce the granting of a 15th patent family covering different advanced power semiconductor device concepts. The company has currently a total of 7 US and 13 GB granted patents.

  • February 2024: Dr. Nistor from mqSemi AG joined on-line the 3rd meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held at the University of Warwick, UK.

  • December 2023: Dr. Nistor from mqSemi AG exhibited the company at Bodo`s Wide Bandgap Event which was held in Munich, Germany on the 13th December 2023. (https://www.bodoswbg.com/)

  • October 2023: As main IEC project partners, Dr. Rahimo and Dr. Nistor attended the IEC launch of the MSB white paper “Power semiconductors for an energy-wise society” at the Cairo, Egypt 2023 87th IEC GENERAL MEETING White Paper seminar on the 27th October 2023. The seminar was held on-line. (https://gm2023.iec.ch/)

  • September 2023: Dr. Rahimo attended the International Conference on Silicon Carbide and Related Materials (ICSCRM) which was held in Sorrento, Italy from the 17th to the 22nd of September 2023. He was chairing the Technical Program Committee for the conference which was a large success with respect to the quality and quantity of papers and number of attendees. He also gave an oral presentation entitled "Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance". (https://icscrm-2023.org/). During the event, Dr. Rahimo also attended the second EU Horizon project AdvanSiC meeting with the project consortium partners.

  • June 2023: Dr. Rahimo and Dr. Nistor from mqSemi AG attended the International Conference on Silicon Carbide and Related Materials (ICSCRM) Technical Program Committee meeting for the conference at the The University of Naples, Italy. During the event, Dr. Rahimo and Dr. Nistor also attended an EU Horizon project AdvanSiC technical meeting with the project consortium partners.

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  • February 2023: Dr. Nistor from mqSemi AG joind the kick off meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held on 21st February at IKERLAN headquarters in MONDRAGON, Spain. (News - ADVANSiC (advansic-euproject.eu))

  • January 2023: Dr. Rahimo was elevated to a 2023 IEEE Fellow "for contributions to high-voltage insulated gate bipolar transistors for grid applications". The Institute of Electrical and Electronics Engineers IEEE Fellow is a distinction reserved for select members whose exceptional accomplishments in any of the IEEE fields of interest are deemed fitting of this prestigious grade elevation.

  • January 2023: mqSemi AG is pleased to announce the start of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids), mqSemi AG is part of a consortium of reputable academic and industrial partners with the aim to develop advanced SiC MOSFET material, process and design technology platforms for next generation renewable energy wind converters and solid state breaker solutions. (https://cordis.europa.eu/project/id/101075709)

  • December 2022: mqSemi AG is happy to announce the granting of a 10th patent family covering different advanced power semiconductor device concepts. The company has currently a total of 6 US and 6 GB granted patents with many more patent applications pending. 

  • October 2022: Dr. Rahimo will be chairing the Technical Program Committee for the International Conference on Silicon Carbide and Related Materials (ICSCRM) to be held in Sorrento, Italy from the 17th to the 22nd of September 2022. (https://icscrm-2023.org/)

  • September 2022: Our abstract entitled "Short Channel Effects of SiC MOSFET based on S-MOS Cell Concept" was presented by Dr. Rahimo in a poster session at the 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022) in Davos, Switzerland held from the 11th to 16th September 2022. (https://icscrm2022.org/). Dr. Nistor also presented a tutorial with the title "From prototype to market – innovating with commercial purpose" at the conference. Dr Rahimo served on the Technical Program Committee while Dr. Nistor served on the Conference Organizing Committee.

  • December 2021: mqSemi AG files additional 5 patent applications in 2021 with the first GB patent granted for a 3D MOS cell design.

  • November 2021: Dr. Rahimo presents "Enabling Advanced 3D Power Device Proof of Concept for Start-Up Companies with Silvaco TCAD Simulations" at the Silvaco 4th annual Series of UseRs Global Events (SURGE), Virtual Event Europe and North America in October and  November, 2021 respectively. (https://silvaco.com/corporate/surge/)

  • October 2021: Our abstract entitled "Advanced 1200V SiC MOSFET based on Singular Point Source MOS (S-MOS) Technology" was presented at the13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021). It was presented by Dr. Rahimo in the HV and Advanced Devices Oral session on the virtual conference platform on Tuesday, 26th of October, 2021 (https://www.ecscrm-2020.com/detailed-schedule-2021). The S-MOS technology was mentioned at the end of the conference as a potential future concept for the SiC technology roadmap.

  • August 2021: Our paper entitled "Singular Point Source MOS (S-MOS) Cell Concept" was presented at the 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS (ISPS) 2021 in August, 2021 in Prague, Czech Rep. It was presented by Dr. Rahimo for demonstrating the S-MOS concept for low voltage MOSFETs structures. (https://technology.fel.cvut.cz/en/ISPS2021/)

 

  • June 2021: Our paper entitled "Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT" was presented at the 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) in June, 2021 at Nagoya, Japan. It was presented by Dr. Rahimo in the IGBT Oral session on the virtual conference platform on Tuesday, 1st of June, 2021 (https://ispsd2021.com/program.html ). The breakthrough S-MOS technology represents a paradigm shift in how future MOS-based transistor cells can be designed and operated. The proof of concept was demonstrated using advanced 3D-TCAD simulations in cooperation with SILVACO. (www.silvaco.com)

  • May 2021: We are pleased to announce that our first technology whitepaper is available. Contacting us directly will be highly appreciated to share the whitepaper with interested parties who wish to discuss business and collaboration opportunities.

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  • April 2021:  mqSemi AG becomes a member of the swiss collaboration project PECTA (Power Electronic Conversion Technology Annex), which involves many european and international academic and industrial partners. (https://www.iea-4e.org/pecta/)

  • December 2020: mqSemi AG files additional 5 patent applications in 2020.

  • December 2019: mqSemi AG files more than ten patent applications in 2019 covering advanced 3D MOS cell design concepts.

  • May 2019:  Launch of mqSemi AG

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Our S-MOS Technology at ISPSD`2021

We are pleased to announce that our paper entitled "Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT" has been selected for an oral presentation at the upcoming 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) which will be held between 30th of May and 3rd of June, 2021 at Nagoya, Japan (www.ispsd2021.com).

 

We will be presenting our paper in the IGBT Oral session on the virtual conference platform on Tuesday, 1st of June , 2021 ( https://ispsd2021.com/program.html )

 

The breakthrough S-MOS technology represents a paradigm shift in how  
future MOS-based transistor cells can be designed and operated. The proof of concept was demonstrated using advanced 3D-TCAD simulations in cooperation with SILVACO (www.silvaco.com). The paper will discuss in detail the S-MOS design concept and key performance parameters, such as achieving low on-state losses at very high current densities, high voltage blocking capability, and optimized switching and short circuit performance.

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Adjustable Switch Hybrid at PCIM`2021

mqSemi AG is collaborating with academia and MTAL GmbH (www.mtal.ch) to develop an advanced Adjustable Hybrid Switch (AHS) automotive converter concept. The technology will be presented in the paper entitled "An Advanced Adjustable Switch Hybrid (ASH) Concept for High Power Automotive Converters" at the PCIM Europe 2021 which will be held digitally from 3rd to 7th of May 2021 (PCIM Europe – the international event in power electronics (mesago.com))

The presentation will be presented in the "Automotive Applications II" session on the virtual conference platform on Friday, 7th of May, 2021 ( Program - PCIM Europe - Mesago)

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