• February 2025: Dr. Nistor and Dr. Rahimo from mqSemi AG joined the 5th meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held at Deep Concept in Tarbes, France.

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• February 2025: Dr. Rahimo was elected a Fellow of the Institute of Physics (FInstP). Fellowship in the IoP is the highest level of membership attainable by physicists who have made a significant impact on their sector and for distinguished physicists in recognition of their accomplishments.

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• January 2025: As part of the AdvanSiC EU funded project, the first 3300V and 1200V Silicon Carbide Wafers have been processed and tested. The wafers include low loss planar SiC MOSFETs and mqSemi`s proprietary Quasi-Planar-Trench (QPT) SiC MOSFET​ based on 3D MOS cell technology. Further testing and packaging of the devices including end-user sampling will be carried out in 2025. 

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• December 2024: mqSemi AG is happy to announce the granting of a 17th patent family covering different advanced power semiconductor device concepts. The company has currently a total of 10 US and 17 GB granted patents.

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• November 2024: Dr. Rahimo and Dr. Nistor has co-authored with the team at AdvanSiC a paper which was presented at the IEEE DMC Design Methodologies for Power Electronics Conference in Grenoble, France. The paper was entitled  “Inverse Order Packaging (invPack): Power Module Packaging Technique Using Standard Fabrication Processes and Achieving Improved Performance at Lower Cost”. (https://attend.ieee.org/dmc-2024/)

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• October 2024: Dr. Rahimo from mqSemi AG joined the kick-off meeting of the European Horizon funded project FlagChip (Flagship advanced solutions for Condition and Health monitoring In Power electronics). The meeting was held at CIRCE headquarters in Zaragoza, Spain. (https://flagchip-project.eu/)

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• October 2024: Dr. Rahimo and Dr. Nistor has co-authored with the team at AdvanSiC a poster which was presented at the ICSCRM 2025 Conference in Raleigh, USA. The paper was entitled “Enhanced Out-of-SOA Performance in 3.3 kV SiC MOSFETs: A Comparative Study of Planar and Quasi-Planar Trench Architectures”. (https://www.icscrm-2024.org/)

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• September 2024: mqSemi AG is pleased to announce the start of the European Horizon funded project FlagChip (Flagship advanced solutions for Condition and Health monitoring In Power electronics), mqSemi AG is part of a consortium of reputable academic and industrial partners with the aim to develop advanced advanced power modules, the condition and health monitoring of power electronics, and enhancing cost efficiency. (https://cordis.europa.eu/project/id/101172794)

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• September 2024: Dr. Rahimo and Dr. Nistor has co-authored with the team at AdvanSiC a paper in the IEEE Transactions on Electron Devices, Vol. 71, Issue 9. The paper was entitled  “Design and Optimization of 3300-V 4H-SiC Semi-Superjunction Schottky Devices”. (https://www.ispsd2024.com/)

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• September 2024: Dr. Nistor from mqSemi AG joined the 4rd meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held at the Brussels, Belgium.​​​​

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• June 2024: Dr. Rahimo and Dr. Nistor has co-authored with the team at AdvanSiC a paper which was presented at the CPE-POWERENG24 in Gdynia, Poland, The paper was entitled  “TCAD-based Investigation of a 3.3 kV Planar SiC MOSFET: BV-RON Trade-Off Optimization”. (https://cpe-powereng2024.umg.edu.pl/)

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• ​June 2024: Dr. Nistor presented at the Technology Stage at PCIM Europe 11th June 2024 in NURNBERG, GERMANY, the talk entitled "IEC White Paper: Power Semiconductors for an Energy-Wise Society". (https://pcim.mesago.com/nuernberg/de/fachmesse/Focus-topic/stages/programm.html#/event.detail.ht)

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• June 2024: Dr. Rahimo and Dr. Nistor has co-authored with the team at AdvanSiC a paper which was presented at the ISPSD 2024 in Bremen, GERMANY. The paper was entitled  “Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices”. (https://www.ispsd2024.com/)

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• May 2024: Dr. Rahimo presented a lecture at the European PhD School in Gaeta Italy  held between the 27th and 31st May 2024. The title of the lecture is "High Voltage/High Power Semiconductors (Si, SiC)". (index.php (ecpe.org))

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• March 2024: mqSemi AG is happy to announce the granting of a 15th patent family covering different advanced power semiconductor device concepts. The company has currently a total of 7 US and 13 GB granted patents.

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• February 2024: Dr. Nistor from mqSemi AG joined on-line the 3rd meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held at the University of Warwick, UK.

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• December 2023: Dr. Nistor from mqSemi AG exhibited the company at Bodo`s Wide Bandgap Event which was held in Munich, Germany on the 13th December 2023. (https://www.bodoswbg.com/)

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• October 2023: As main IEC project partners, Dr. Rahimo and Dr. Nistor attended the IEC launch of the MSB white paper “Power semiconductors for an energy-wise society” at the Cairo, Egypt 2023 87th IEC GENERAL MEETING White Paper seminar on the 27th October 2023. The seminar was held on-line. (https://gm2023.iec.ch/)

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• September 2023: Dr. Rahimo attended the International Conference on Silicon Carbide and Related Materials (ICSCRM) which was held in Sorrento, Italy from the 17th to the 22nd of September 2023. He was chairing the Technical Program Committee for the conference which was a large success with respect to the quality and quantity of papers and number of attendees. He also gave an oral presentation entitled "Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance". (https://icscrm-2023.org/). During the event, Dr. Rahimo also attended the second EU Horizon project AdvanSiC meeting with the project consortium partners.

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• August 2023: Dr. Rahimo gave an invited presentation at the INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS in PRAGUE, CZECH Republic which was held from the 30th August to 1st September 2023.​ The title of the presentation was "Understanding Power Semiconductor Technology Platforms for Building a Viable and Sustainable Product Roadmap". (https://technology.fel.cvut.cz/en/isps/previous_years/isps-2023-proceedings/isps-2023-contents-of-proceedings/)

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• June 2023: Dr. Rahimo and Dr. Nistor from mqSemi AG attended the International Conference on Silicon Carbide and Related Materials (ICSCRM) Technical Program Committee meeting for the conference at the The University of Naples, Italy. During the event, Dr. Rahimo and Dr. Nistor also attended an EU Horizon project AdvanSiC technical meeting with the project consortium partners.

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• May 2023: Dr. Rahimo gave a key note presentation at the PCIM Europe 2023 in NURNBERG, GERMANY which was held from the 9th to 11th of May 2023 (PCIM Europe – the international event in power electronics (mesago.com)).​ The title of the keynote was "HV Silicon and SiC Power Semiconductors - Key Components for Sustainable Energy Solutions". (https://pcim.mesago.com/nuernberg/en/conference/program-speakers/program.detail.html/386/389.html)

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• February 2023: Dr. Nistor from mqSemi AG joined the kick off meeting of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids). The meeting was held on 21st February at IKERLAN headquarters in MONDRAGON, Spain. (News - ADVANSiC (advansic-euproject.eu))

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• January 2023: Dr. Rahimo was elevated to a 2023 IEEE Fellow "for contributions to high-voltage insulated gate bipolar transistors for grid applications". The Institute of Electrical and Electronics Engineers IEEE Fellow is a distinction reserved for select members whose exceptional accomplishments in any of the IEEE fields of interest are deemed fitting of this prestigious grade elevation.

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• January 2023: mqSemi AG is pleased to announce the start of the European Horizon funded project AdvanSiC (Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids), mqSemi AG is part of a consortium of reputable academic and industrial partners with the aim to develop advanced SiC MOSFET material, process and design technology platforms for next generation renewable energy wind converters and solid state breaker solutions. (https://cordis.europa.eu/project/id/101075709)

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• December 2022: mqSemi AG is happy to announce the granting of a 10th patent family covering different advanced power semiconductor device concepts. The company has currently a total of 6 US and 6 GB granted patents with many more patent applications pending. 

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• October 2022: Dr. Rahimo will be chairing the Technical Program Committee for the International Conference on Silicon Carbide and Related Materials (ICSCRM) to be held in Sorrento, Italy from the 17th to the 22nd of September 2022. (https://icscrm-2023.org/)

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• September 2022: Our abstract entitled "Short Channel Effects of SiC MOSFET based on S-MOS Cell Concept" was presented by Dr. Rahimo in a poster session at the 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022) in Davos, Switzerland held from the 11th to 16th September 2022. (https://icscrm2022.org/). Dr. Nistor also presented a tutorial with the title "From prototype to market – innovating with commercial purpose" at the conference. Dr Rahimo served on the Technical Program Committee while Dr. Nistor served on the Conference Organizing Committee.

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• September 2022: mqSemi AG was a Silver Sponsor for the IEEE Workshop on Wide Bandgap Power Devices and Applications, Europe (WiPDA Europe 2022) which was held in Warwick, UK in September 2022 (https://warwick.ac.uk/fac/sci/eng/wipda2022/). Dr. Rahimo also gave a tutorial at the workshop on the 18th of September with the title “High Voltage Blocking Stability and Reliability Challenges for Silicon Carbide Power Devices”. (https://warwick.ac.uk/fac/sci/eng/wipda2022/programme/)​

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• March 2022: Interview with Munaf Rahimo, by Maurizio Di Paolo Emilio, “S-MOS Cell Technology Improves Efficiency of SiC MOSFETs” POWER MANAGEMENT DESIGNLINE, EETimes. (https://www.eetimes.com/s-mos-cell-technology-improves-efficiency-of-sic-mosfets/)

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• March 2022: Silvaco webinar, “Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations”. (https://silvaco.com/webinar/how-to-enable-advanced-3d-power-device-proof-of-concept-with-silvaco-tcad-simulations/)

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• December 2021: mqSemi AG files additional 5 patent applications in 2021 with the first GB patent granted for a 3D MOS cell design.

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• December 2021: Dr. Rahimo has been elected to Fellow of the Institution of Engineering and Technology (FIET). Fellowship is a prestigious honour only granted to individuals who have sustained high levels of achievement within engineering, technology or related disciplines.

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• November 2021: Dr. Rahimo presents "Enabling Advanced 3D Power Device Proof of Concept for Start-Up Companies with Silvaco TCAD Simulations" at the Silvaco 4th annual Series of UseRs Global Events (SURGE), Virtual Event Europe and North America in October and  November, 2021 respectively. (https://silvaco.com/corporate/surge/)

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• October 2021: Our abstract entitled "Advanced 1200V SiC MOSFET based on Singular Point Source MOS (S-MOS) Technology" was presented at the13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021). It was presented by Dr. Rahimo in the HV and Advanced Devices Oral session on the virtual conference platform on Tuesday, 26th of October, 2021 (https://www.ecscrm-2020.com/detailed-schedule-2021). The S-MOS technology was mentioned at the end of the conference as a potential future concept for the SiC technology roadmap.

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• August 2021: Our paper entitled "Singular Point Source MOS (S-MOS) Cell Concept" was presented at the 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS (ISPS) 2021 in August, 2021 in Prague, Czech Rep. It was presented by Dr. Rahimo for demonstrating the S-MOS concept for low voltage MOSFETs structures. (https://technology.fel.cvut.cz/en/ISPS2021/)

 

• June 2021: Our paper entitled "Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT" was presented at the 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) in June, 2021 at Nagoya, Japan. It was presented by Dr. Rahimo in the IGBT Oral session on the virtual conference platform on Tuesday, 1st of June, 2021 (https://ispsd2021.com/program.html ). The breakthrough S-MOS technology represents a paradigm shift in how future MOS-based transistor cells can be designed and operated. The proof of concept was demonstrated using advanced 3D-TCAD simulations in cooperation with SILVACO. (www.silvaco.com)

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• May 2021: We are pleased to announce that our first technology whitepaper is available. Contacting us directly will be highly appreciated to share the whitepaper with interested parties who wish to discuss business and collaboration opportunities.

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• April 2021:  mqSemi AG becomes a member of the swiss collaboration project PECTA (Power Electronic Conversion Technology Annex), which involves many european and international academic and industrial partners. (https://www.iea-4e.org/pecta/)

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• December 2020: mqSemi AG files additional 5 patent applications in 2020.

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• December 2019: mqSemi AG files more than ten patent applications in 2019 covering advanced 3D MOS cell design concepts.

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• May 2019:  Launch of mqSemi AG