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mqSemi introduces the first generation of Silicon Carbide MOSFETs rated at 3300V

The first generation of mqSemi Silicon Carbide MOSFET rated at 3300V is now available in discrete packages with a roadmap to expand the platform to high current modules. The chip technology is designed to provide all the reliability features of state-of-the-art devices, but with enhanced performance designed specifically for efficiency demanding applications.

Preliminary data specifications and engineering samples are available on request. Please contact us on the address shown below for further information.

Title	Component	Voltage Class	Current Rating	Rdson at Vgs=20V, RT	Package	Image
		Volt	Amp	mohm
Part Number	MQA50M330T10	3300	50	60	TO-247 4L